Wavelength
Size
Description
850nm
3"/4"/6" GaAs
10G/25G for Data Communication
10G and 25G VCSEL data communication products are high-speed, efficient, low-power, high-reliability optoelectronic components that are widely used in the field of data communications. It is usually used in high-speed data transmission situations such as data centers, LANs, and WANs. It has the advantages of low power consumption, high reliability, and high speed, and is one of the important optoelectronic components that can replace traditional electronic components.
Wavelength
Size
Description
940nm
4"/6" GaAs
940nm VCSEL for 3D Sensing Applications
850nm
4"/6" GaAs
850nm High Power VCSEL
905nm
4"/6" GaAs
905nm 5 Junctions for LiDAR
940nm
4"/6" GaAs
940nm 3 Junctions for D-ToF
808nm
4"/6" GaAs
808nm High Power VCSEL
High-power VCSEL products are optoelectronic components with high output power, large emission area, controllable emission angle, and stable wavelength. They are mainly used in laser printing, lidar, laser display, laser medical treatment, laser manufacturing and other fields. The output power of high-power VCSEL products usually ranges from hundreds of milliwatts to several watts. Compared with traditional laser diodes (LD), their power density is higher, and the output wavelength is singular.
Wavelength
Size
Description
660nm
4"/6" GaAs
660nm Red VCSEL
680nm
4"/6" GaAs
680nm Red VCSEL
795nm
4"/6" GaAs
795nm VCSEL
1030nm
4"/6" GaAs
1030nm VCSEL
The 660,680and 795nm VCSEL products are high-efficiency, narrow-spectrum, fast-modulation and low-noise optoelectronic components. The 660and 680nm VCSELs are mainly used in medical equipment, 3D imaging, optical communication, ophthalmic surgery, iris recognition and other fields, while the 795nm VCSEL is mainly used in pulse ranging, oil and gas exploration, flow measurement and other fields. These VCSEL products usually have the characteristics of high efficiency, narrow spectrum, fast modulation, low noise and so on. Compared with traditional laser diodes (LDs), VCSEL products have the advantages of smaller divergence angles, better spatial consistency, and lower thermal effects.
Wavelength
Size
Description
808nm
4"/6" GaAs
808nm High Power EEL
905nm
4"/6" GaAs
905nm 3J/4J EEL for LiDAR
980nm
4"/6" GaAs
980nm High Power EEL
850nm
4"/6" GaAs
850 PD
Gallium arsenide (GaAs) edge-emitting lasers (EELs) and photodiode (PDs) are optoelectronic components based on GaAs semiconductor materials. The GaAs EEL works by injecting current into the GaAs material to excite electrons to jump from the valence band to the conduction band and then emit photons. It can be applied to optical communication, optical fiber sensing, optical magnetic recording and other fields. The GaAs photodiode (PD) is a PN junction-based photodetector. It converts photons into electrons, thereby generating photocurrent. It can be used in optical communications, optical fiber sensing, optical imaging, spectral analysis and other fields.
Wavelength
Size
Description
N/A
4"/6" GaAs
HBT
GaAs heterojunction bipolar transistor (HBT) is a kind of heterojunction bipolar transistor. This structure has high electron mobility and low basic shrinkage effect. GaAs HBT is mainly used in high-speed amplifiers, low-noise amplifiers, power amplifiers and switches. Its operating frequency can reach tens of GHz to hundreds of GHz. For example, in wireless communication, GaAs HBT can be used in RF preamplifiers, frequency synthesizers, mixers and other key circuits. It can be used in high-speed amplifiers, low-noise amplifiers, power amplifiers and switches, and its operating frequency can reach tens of GHz to hundreds of GHz.
Wavelength
Size
Description
1550/1310nm
2"/3" InP
DFB
1550/1310nm
2"/3" InP
FP
1550/1310nm
2"/3" InP
PIN/APD
Indium phosphide DFB (Distributed Feedback), FP (Fabry-Perot) and PD (Photodiode) are based on photonic lattice structure, optical cavity resonance structure and internal photoelectric effect respectively, and can be used in optical communications, optical sensing, lidar, Spectral analysis and other fields. DFB lasers have the characteristics of high single-mode output power, narrow linewidth and low noise. The spectral width of indium phosphide DFB lasers is generally between a few hundred kilohertz and several megahertz. The operating wavelength can cover two windows of 1300nm and 1550nm, and can be used in optical communications, optical sensing and other fields. FP lasers have high output power and wide spectral linewidth. It can be used in laser radar, spectral analysis and other fields. PD photodiodes have the characteristics of high sensitivity and high response speed. The operating wavelength is generally in the 1300nm and 1550nm windows, and can be used in optical communications, optical sensing and other fields.
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