WaferChina Co., Ltd. is located in Xi'an Hi-tech Zone. We are focusing on the development and production of III-V compound semiconductor epitaxial wafer with gallium arsenide (GaAs) and indium phosphide (InP) as the substrate, and specially provides customized epitaxy growth services. WaferChina has a world-class MOCVD epitaxial technology team, which has overcome key technical difficulties in epitaxial wafer growth, and its important specifications have reached or exceeded international advanced levels. WaferChina is one of the few foundries in China that has the ability to mass produce GaAs and InP compound semiconductor epitaxial wafers.

WaferChina's new project is located in the planned core area of Silk Road Science City in Xi'an High-tech Zone. It is planned to build several research and production lines for GaAs and InP compound semiconductor epitaxial growth. The project is expected to produce over one hundred thousand epitaxial wafers annually after completion. The completion of this project will further strengthen the company's industrial advantages in semiconductor lasers, photodetectors, and HBT epitaxial wafers, promote industrial agglomeration in the semiconductor and new material industries, and promote the construction of digitalization and intelligence in China.